THz MMICs based on InP HBT Technology
THz MMICs based on InP HBT Technology
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DOI：
10.1109/mwsym.2010.5518124
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发表时间：
2010-05
期刊：
影响因子：
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通讯作者：
J. Hacker;M. Seo;A. Young;Z. Griffith;M. Urteaga;T. Reed;M. Rodwell
中科院分区：
文献类型：
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作者：
J. Hacker;M. Seo;A. Young;Z. Griffith;M. Urteaga;T. Reed;M. Rodwell
报道了一种基于磷化铟(InP)双异质结双极晶体管(DHBT)的太赫兹单片集成电路(TMIC)，它采用256 nm InP DHBT晶体管和一个多用途的三层金属互连系统。InP DHBT MMIC工艺非常适合TMIC，因为它具有高带宽(Fmax=808 GHz)和高击穿电压(BVCBo=4V)，集成了10微米厚的BCB介质层，支持用于LNA、PA和VCO调谐网络的低损耗THz微带线，以及用于紧凑型数字和模拟模块的高密度薄膜互连。设计和制造了TMIC低噪声和驱动放大器、固定和压控振荡器、动态分频器和双平衡Gilbert单元混频器。这些结果证明了256 nm InP DHBT技术能够使复杂的单芯片外差接收器和激励器工作在太赫兹频率。
An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported. The InP DHBT MMIC process is well suited for TMICs due to its high bandwidth (fmax = 808 GHz) and high breakdown voltage (BVCBo = 4V) and integrated 10-µm thick layer of BCB dielectric supporting both low-loss THz microstrip lines for LNA, PA, and VCO tuning networks, and high-density thin-film interconnects for compact digital and analog blocks. TMIC low noise and driver amplifiers, fixed and voltage controlled oscillators, dynamic frequency dividers, and double-balanced Gilbert cell mixers have been designed and fabricated. These results demonstrate the capability of 256nm InP DHBT technology to enable sophisticated single-chip heterodyne receivers and exciters for operation at THz frequencies.