Phase and microstructure of ALD-W films deposited using B2H6 and WF6 and their effects on CVD-W growth
Phase and microstructure of ALD-W films deposited using B2H6 and WF6 and their effects on CVD-W growth
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DOI：
10.1149/1.2815962
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发表时间：
2008-01-01
影响因子：
3.9
通讯作者：
Sohn, Hyunchul
中科院分区：
文献类型：
--
作者：
Kim, Soo-Hyun;Yeom, Seung-Jin;Sohn, Hyunchul
我们报告的沉积性能的W成核层的制备使用顺序供应的B2 H6和WF 6及其对随后的化学气相沉积（CVD）-W的生长的影响。的W成核层的结构特性，如它们的相，结晶度和晶粒尺寸取决于沉积温度，B2 H6流量，和B2 H6脉冲时间。根据沉积温度，观察到非晶和两种形式的结晶W膜[原始立方β相和体心立方（bcc）α-1]的形成。X射线衍射和透射电子显微镜衍射分析表明，在高达350摄氏度的温度下主要沉积非晶W，当沉积温度升高到395摄氏度时，薄膜形成β相。在425 ℃的沉积温度下，膜的相开始转变为β相，并且在450 ℃下完全转变为具有约120-180 nm的非常大的晶粒尺寸的单相α-W。我们还能够在395 ℃下以较低的B2 H6流速存款α相W膜，但其晶粒尺寸仅为约20-30 nm。W成核层对沉积在其上的CVD-W薄膜的最终晶粒尺寸和电阻率有显著的影响。具有优化的B2 H6基成核层的50 nm厚CVD-W膜的最小电阻率类似于10 μ Ω cm，而具有SiH 4基成核层的常规CVD-W膜在相同厚度下显示出25 μ Ω cm的电阻率。(c)2007年电化学学会。
We report on the deposition properties of W nucleation layers prepared using a sequential supply of B2H6 and WF6 and their effects on the growth of the subsequent chemical vapor deposited (CVD)-W. The structural properties of the W nucleation layers such as their phase, crystallinity, and grain size depended on the deposition temperature, B2H6 flow rate, and B2H6 pulsing time. The formation of an amorphous and two forms of crystalline W film [primitive cubic beta-phase and body-centered-cubic (bcc) alpha-one] was observed, depending on the deposition temperature. X-ray diffractometry and transmission electron microscopy diffraction analysis showed that the amorphous W was dominantly deposited at temperatures of up to 350 degrees C and that when the deposition temperature was increased to 395 degrees C, the film formed the beta-phase. At a deposition temperature of 425 degrees C, the phase of the film started to be transformed into beta-phase and was completely transformed to single phase alpha-W with a very large grain size of approximately 120-180 nm at 450 degrees C. We were also able to deposit the alpha-phase W film at 395 degrees C with a lower B2H6 flow rate, but its grain size was only approximately 20-30 nm. The W nucleation layers had a significant effect on the final grain size and resistivity of the CVD-W films deposited on them. The minimum resistivity of the 50 nm thick CVD-W film with the optimized B2H6-based nucleation layer was similar to 10 mu Omega cm, while the conventional CVD-W film with a SiH4-based nucleation layer showed a resistivity of 25 mu Omega cm at the same thickness. (c) 2007 The Electrochemical Society.