Leakage current of sol-gel derived Pb(Zr, Ti)O3 thin films having Pt electrodes
Leakage current of sol-gel derived Pb(Zr, Ti)O3 thin films having Pt electrodes
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DOI：
10.1063/1.125310
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发表时间：
1999-11
影响因子：
4
通讯作者：
J. Shin;C. Hwang;H. Kim;S. Park
中科院分区：
文献类型：
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作者：
J. Shin;C. Hwang;H. Kim;S. Park
分别基于完全耗尽膜模型、热电子场发射模型和空间电荷限制导电模型分析了溶胶-凝胶法制备的PZT薄膜在铂电极上的低场和高场下的导电行为。对于厚度从150 nm到250 nm的薄膜，由于相对较大的厚度，没有观察到介电常数随厚度的变化。低场区较小的薄膜厚度相关漏电流特性表明，薄膜中的正空间电荷密度约为1018 cm−3，比溅射沉积的(Ba，Sr)TiO_3薄膜小一个数量级。计算得到的界面势垒高度为0.93 eV，电子有效质量为0.09m0。在高场区，log J-log V曲线的斜率大于2，表明电子陷阱的能级连续分布在高场区。
The electrical conduction behaviors of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films on Pt electrodes were analyzed based on a fully depleted film, thermionic field emission, and space charge limited conduction model in the low and high electric field regions, respectively. For films having thicknesses ranging from 150 to 250 nm, no thickness-dependent variation in the dielectric constant was observed due to the relatively large thicknesses. The rather small film-thickness-dependent leakage current characteristics in the low-field region elucidates that the positive space charge density in the film is about 1018 cm−3, which is a smaller value than that of the sputter deposited (Ba, Sr)TiO3 thin films by an order of magnitude. The calculated interfacial potential barrier height and effective mass of electrons were 0.93 eV and 0.09m0, respectively. The slope larger than 2 from the log J vs log V plot in the high-field region implies that the energy level of electron traps are continuously distributed in the...