A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process
A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process
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一种通过新颖的斜坡冷却工艺生长垂直排列硅纳米线的可靠方法
DOI：
10.1016/j.apsusc.2012.04.153
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发表时间：
2012
影响因子：
6.7
通讯作者：
F. Hong
中科院分区：
文献类型：
--
作者：
T. Ho;F. Hong
我们在热壁化学气相沉积反应器中使用四氯硅烷 (SiCl4) 通过金催化气液固 (VLS) 工艺在 Si (111) 基底上生长硅纳米线 (SiNW)。即使在包括氢气退火以减少表面原生氧化物的优化条件下，直径为 150-200nm 的外延 SiNW 也经常沿着所有四个<111>族方向生长，其中一个方向垂直，其他三个方向倾斜于表面。因此，仅尝试通过利用液相外延（LPE）机制的斜坡冷却工艺在Au涂覆的Si（111）上沿[111]生长高度有序的SiNW阵列。首先将镀金的硅衬底在 650°C 的氢气中退火，形成金硅合金纳米粒子，然后以受控速率进行斜坡冷却，基于 LPE 机制在衬底上沉淀外延硅晶种。将基板在 SiCl4/H2 中进一步加热至 850°C，以便 SiNW 在 Si 晶种上进行 VLS 生长。因此，几乎 100% 沿 [111] 垂直排列的 SiNW 只能在 Si (111) 上重复生长，而无需使用模板或对金属催化剂进行图案化。高密度垂直排列的SiNW在太阳能电池和纳米器件方面具有良好的潜力。
We have grown silicon nanowires (SiNWs) on Si (111) substrates by gold-catalyzed vapor–liquid–solid (VLS) process using tetrachlorosilane (SiCl4) in a hot-wall chemical vapor deposition reactor. Even under the optimized conditions including H2annealing to reduce the surface native oxide, epitaxial SiNWs of 150–200nm in diameter often grew along all four 〈111〉 family directions with one direction vertical and three others inclined to the surface. Therefore, the growth of high degree ordered SiNW arrays along [111] only was attempted on Au-coated Si (111) by a ramp-cooling process utilizing the liquid phase epitaxy (LPE) mechanism. The Au-coated Si substrate was first annealed in H2at 650°C to form Au–Si alloy nanoparticles, and then ramp-cooled at a controlled rate to precipitate epitaxial Si seeds on the substrate based on LPE mechanism. The substrate was further heated in SiCl4/H2to 850°C for the VLS growths of SiNWs on the Si seeds. Thus, almost 100% vertically-aligned SiNWs along [111] only could be reproducibly grown on Si (111), without using a template or patterning the metal catalyst. The high-density vertically-aligned SiNWs have good potentials for solar cells and nano-devices.
影响因子：
29.4
作者：
Zhang Zhang-Zhang;Tomohiro Shimizu;S. Senz;U. Gösele
通讯作者：
Zhang Zhang-Zhang;Tomohiro Shimizu;S. Senz;U. Gösele