Ion gel gated polymer thin-film transistors
Ion gel gated polymer thin-film transistors
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DOI：
10.1021/ja070875e
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发表时间：
2007-04-18
影响因子：
15
通讯作者：
Frisbie, C. Daniel
中科院分区：
文献类型：
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作者：
Lee, Jiyoul;Panzer, Matthew J.;Frisbie, C. Daniel
我们使用离子凝胶（离子液体加三嵌段共聚物）作为栅极介电层制造了聚合物半导体薄膜晶体管。离子凝胶的栅极电容在10 Hz 时可高达40 μ F/cm(2)，在1 kHz 时可高达2 μ F/cm(2)。此外，离子凝胶的极化响应时间比之前测试的固体聚合物电解质快得多，使得离子凝胶门控晶体管能够在更高的频率（> 100 Hz）下工作。
We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 mu F/cm(2) at 10 Hz and 2 mu F/cm(2) at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (> 100 Hz).