Impurity Engineering of Czochralski Silicon
Impurity Engineering of Czochralski Silicon
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DOI：
10.4028/www.scientific.net/ssp.156-158.261
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发表时间：
2009-10
期刊：
影响因子：
--
通讯作者：
Jia He Chen;Xiangyang Ma;Deren Yang
中科院分区：
文献类型：
--
作者：
Jia He Chen;Xiangyang Ma;Deren Yang
本文评述了大规模集成电路中“直拉硅中杂质工程”的新概念。通过在直拉硅材料中有目的地掺杂一定的杂质，如氮（N）、锗（Ge）甚至碳（C，高浓度），可以提高直拉硅晶片的内吸杂能力。同时，CZ硅片中的空洞缺陷在较高温度下退火时容易消除。此外，还发现可以增加机械强度，从而减少晶片的破损。因此，我们相信，通过杂质工程，直拉硅片可以满足超大规模集成电路的要求。
The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping with a certain impurities into CZ silicon materials intentionally, such as nitrogen (N), germanium (Ge) and even carbon (C, with high concentration), internal gettering ability of CZ silicon wafers could be improved. Meanwhile, void defects in CZ silicon wafer could be easily eliminated during annealing at higher temperatures. Furthermore, it was also found that the mechanical strength could be increased, so that breakage of wafers decreased. Thus, it is believed that by impurity engineering CZ silicon wafers can satisfy the requirment of ultra large scale integrated circuits.