Metal acetylacetonate domains grown on H-terminated porous silicon at room temperature and their specific I-V behavior.
Metal acetylacetonate domains grown on H-terminated porous silicon at room temperature and their specific I-V behavior.
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DOI：
10.1021/jp0628481
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发表时间：
2006-11
期刊：
影响因子：
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通讯作者：
J. Chao;Haitao Wang;Bing Xia;Hong-Bo Liu;Zhong-Dang Xiao;S. Xiao
中科院分区：
文献类型：
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作者：
J. Chao;Haitao Wang;Bing Xia;Hong-Bo Liu;Zhong-Dang Xiao;S. Xiao
在室温下，将多孔硅（PS）在Mn（acac）（3）、Fe（acac）（3）、Co（acac）（3）和Ni（acac）（2）（acac = MeCOCHCOMe）的金属乙酰丙酮化物的有机溶液中孵育。通过原子力显微镜（AFM）观察到PS表面自发自组装形成了类晶畴。衰减全反射傅里叶变换红外光谱（ATR-FTIR）和X射线光电子能谱（XPS）的光谱研究表明，从金属乙酰丙酮化物的域生长。使用电流传感原子力显微镜（CSAFM）测量纳米级畴的I-V曲线，并且意外地检测到乙酰丙酮锰和钴畴上的特定阶跃电流。
Porous silicon (PS) was incubated in an organic solution of metal acetylacetonates of Mn(acac)(3), Fe(acac)(3), Co(acac)(3), and Ni(acac)(2) (acac = MeCOCHCOMe) at room temperature. Crystal-like domains were found to be spontaneously self-assembled on PS surfaces by atomic force microscopy (AFM). Spectroscopic studies with attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and X-ray photoelectron spectroscopy (XPS) revealed that the domains were grown from metal acetylacetonates. Current sensing atomic force microscopy (CSAFM) was used to measure the I-V curves of domains in nanoscale and specific step-jump currents on the manganese and cobalt acetylacetonate domains were surprisingly detected.