Large-area Si(Li) orthogonal-strip detectors
Large-area Si(Li) orthogonal-strip detectors
复制标题
大面积硅(锂)正交带探测器
DOI：
--
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
P. Luke
中科院分区：
文献类型：
--
作者：
Craig Tindall;M. Amman;P. Luke
分段锂漂移硅探测器正在开发中，用于大型康普顿相机和医疗成像。我们已经成功地制作了3.5毫米厚的交叉条探测器，有效面积为40 /spl倍/ 40毫米/sup 2/与2毫米的条间距。这些探测器利用新的接触技术，包括硼注入的p型接触和非晶硅（/spl α/-Si）n型接触。在相对较高的工作温度下，从两个接触获得了良好的能量分辨率和优异的条带分离。在122 keV下，对于α-Si带，在200 K温度下获得了2.1 keV的半高宽能量分辨率，对于B带，在240 K温度下获得了2.1 keV的半高宽能量分辨率。还进行了条带之间的电荷共享的测量。当探测器被60 keV的伽马射线泛光照射时，对于两个相邻条带之间共享信号的事件，观察到小的信号不足。缺陷的量取决于接触类型、带材几何形状和操作温度。
Segmented lithium drifted silicon detectors are being developed for use in large Compton cameras and for medical imaging. We have successfully fabricated 3.5 mm thick crossed-strip detectors with active areas of 40 /spl times/ 40 mm/sup 2/ with a 2 mm strip pitch. These detectors utilize new contact technology consisting of a boron implanted p-type contact and an amorphous silicon (/spl alpha/-Si) n-type contact. Good energy resolution and excellent strip separation was obtained from both contacts at relatively high operating temperatures. An energy resolution of 2.1 keV FWHM at 122 keV was obtained for the /spl alpha/-Si strip at temperature up to 200 K and for the B strip at temperature up to 240 K. Measurements of the charge sharing between the strips were also performed. When the detector was flood illuminated with 60 keV gamma-rays, a small signal deficit was observed for events in which the signal was shared between two adjacent strips. The amount of deficit depended on the contact type, strip geometry and the operating temperature.