Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
复制标题
4H-SiC PiN 二极管中单个肖克利型堆垛层错扩展的注入载流子浓度依赖性
DOI：
10.1063/1.5009365
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发表时间：
2018
影响因子：
3.2
通讯作者：
H. Tsuchida
中科院分区：
文献类型：
--
作者：
T. Tawara;S. Matsunaga;Takumi Fujimoto;Mina Ryo;M. Miyazato;T. Miyazawa;K. Takenaka;M. Miyajima;A. Otsuki;Y. Yonezawa;Tomohisa Kato;H. Okumura;T. Kimoto;H. Tsuchida
通过对不同阳极Al浓度的4 H-SiC PiN二极管电致发光的监测，研究了位错速度和注入载流子浓度对单个Shockley型层错扩展的影响。注入的载流子浓度是使用器件模拟计算的，该器件模拟考虑了在二极管关断期间漂移层中测得的累积电荷。位错速度强烈依赖于注入的空穴浓度，这代表了过剩载流子浓度。位错速度的激活能是相当小的（低于0.001 eV之间的310和386 K）在一个固定的范围内的空穴浓度。对于具有不同Al浓度的p型外延阳极的二极管，在缓冲层和衬底之间的界面处扩展条形单个肖克利型堆垛层错所需的平均阈值空穴浓度被确定为1.6-2.5 × 1016 cm-3。
We investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations. The injected carrier concentration was calculated using a device simulation that took into account the measured accumulated charge in the drift layer during diode turn-off. The dislocation velocity was strongly dependent on the injected hole concentration, which represents the excess carrier concentration. The activation energy of the dislocation velocity was quite small (below 0.001 eV between 310 and 386 K) over a fixed range of hole concentrations. The average threshold hole concentration required for the expansion of bar-shaped single Shockley-type stacking faults at the interface between the buffer layer and the substrate was determined to be 1.6–2.5 × 1016 cm−3 for diodes with a p-type epitaxial anode with various Al concentrations.