Chemical Bath Deposition of Copper Sulfide on Functionalized SAMs: An Unusual Selectivity Mechanism
Chemical Bath Deposition of Copper Sulfide on Functionalized SAMs: An Unusual Selectivity Mechanism
复制标题
功能化 SAM 上硫化铜的化学浴沉积：一种不寻常的选择性机制
DOI：
10.1021/acs.langmuir.9b03436
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发表时间：
2020
期刊：
影响因子：
3.9
通讯作者：
Walker, Amy V.
中科院分区：
文献类型：
--
作者：
Hedlund, Jenny K.;Estrada, Tania G.;Walker, Amy V.
我们已经研究了化学浴沉积（CBD）的硫化铜使用硫代乙酰胺功能化的自组装单分子膜（SAMs），使用扫描电子显微镜和光学显微镜，X射线光电子能谱，和飞行时间二次离子质谱。对于所有的SAM研究，沉积的量的硫化铜是强烈依赖于浴的pH值，可以归因于SAM的端基与溶液中存在的硫属离子的相互作用。对于− CH 3-封端的自组装膜，随着镀液pH值的增加，CuS的沉积量稳步增加，因为硫属元素离子的浓度增加。然而，对于−OH-和− COOH-封端的自组装膜，我们观察到最大量的CuS沉积在pH 10。我们将这种行为归因于带负电荷的SAM末端基团对硫属化物离子的排斥与硫属化物离子浓度随浴pH增加而增加之间的竞争。利用硫属化物离子与不同SAM末端官能团的相互作用，我们证明了CuS可以选择性地沉积在图案化的−OH/-CH 3-和−COOH/-CH 3-终止的SAM的− CH 3-终止区域上。
We have investigated the chemical bath deposition (CBD) of CuS using thioacetamide on functionalized self-assembled monolayers (SAMs) using scanning electron and optical microscopies, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. For all SAMs studied, the amount of CuS deposited is strongly dependent on the bath pH and can be attributed to the interaction of the SAM terminal groups with the chalcogenide ions present in solution. For −CH3-terminated SAMs, there is a steady increase in the amount of CuS deposited with an increase in the bath pH because there is an increase in the concentration of chalcogenide ion. However, for −OH- and −COOH-terminated SAMs, we observe that the maximum amount of CuS is deposited at pH 10. We attribute this behavior to a competition between the repulsion of the chalcogenide ions by the negatively charged SAM terminal groups and an increase in the chalcogenide ion concentration with an increase in the bath pH. Using the interaction of the chalcogenide ions with the different SAM terminal functional groups, we demonstrate that CuS can be selectively deposited on the −CH3-terminated areas of patterned −OH/–CH3- and −COOH/–CH3-terminated SAMs.