Relationship between the surface structure of the gate insulator and the performance of organic thin-film transistors
Relationship between the surface structure of the gate insulator and the performance of organic thin-film transistors
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DOI：
10.1016/j.orgel.2020.105928
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发表时间：
2020-08
影响因子：
3.2
通讯作者：
Chiho Katagiri;K. Akaike;T. Miyamae
中科院分区：
文献类型：
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作者：
Chiho Katagiri;K. Akaike;T. Miyamae
为了研究用于形成有机场效应晶体管（OFFET）栅极绝缘体的自组装单层（SAM）的不同表面结构对器件性能的影响，对具有不同表面结构的SAM绝缘体进行了和频产生光谱和接触角测量。此外，SAM的表面结构随着其浸渍或旋涂形成方法的改变而变化。此外，当仅改变栅极绝缘体的表面结构时，检查OFFEX的电性能。结果表明，与浸渍法相比，旋涂法制备的十八烷基膦酸（ODPA）SAM表面烷基链的无序度（角缺陷）增加。接触角的测量表明，ODPA-SAM的表面自由能的增加与SAM表面上的笨拙缺陷的增加串联。与预期相反，具有带笨拙缺陷的SAM绝缘体的OFFERS的器件性能得到改善，这最可能是由于ODPA-SAM和聚（3-己基噻吩）（P3 HT）之间较小的表面自由能差，这改善了ODPA-SAM/P3 HT界面处的粘附性。
To investigate the impact on the device performance of different surface structures of the self-assembled monolayer (SAM) used to form the gate insulator of organic field effect transistors (OFETs), sum frequency generation spectroscopy and contact angle measurements were performed on SAM insulators with different surface structures. Furthermore, the surface structure of the SAM was varied with changing its dipping or spin coating formation method. Moreover, the electrical properties of OFETs were examined when only the surface structure of the gate insulator had changed. The results showed that compared with the dipping method, the disorder of alkyl chains (gauche defects) increased on the octadecylphosphonic acid (ODPA) SAM surface, deposited through the spin coating method. Contact angle measurements revealed that the surface free energy of ODPA-SAM increased in tandem with an increase in gauche defects on the SAM surface. Contrary to expectations, the device performance of OFETs with the SAM insulator with gauche defects improved, which is most probably due to the smaller surface free energy difference between ODPA-SAM and poly(3-hexylthiophene) (P3HT), which improved the adhesion at the ODPA-SAM/P3HT interface.