Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step ${\hbox {Si}}^ + $ Implantation
Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step ${\hbox {Si}}^ + $ Implantation
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DOI：
10.1109/tns.2014.2316017
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发表时间：
2014-05
影响因子：
1.8
通讯作者：
Huixiang Huang;Dawei Bi;Ming Chen;Yanwei Zhang;Xing Wei;Zhiyuan Hu;Zhengxuan Zhang
中科院分区：
文献类型：
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作者：
Huixiang Huang;Dawei Bi;Ming Chen;Yanwei Zhang;Xing Wei;Zhiyuan Hu;Zhengxuan Zhang
提出了一种改进的硬化技术，以使用多步 Si+ 离子注入来提高绝缘体上硅 (SOI) 技术中掩埋氧化物的总剂量硬度。每个注入步骤都会向埋入氧化物中引入 5 ×1015/cm2 的剂量，从而在顶部 Si 层内形成非晶/晶体 (a/c) 界面。注入间快速热退火 (RTA) 通过将 a/c 界面移向顶部硅表面来消除注入引起的晶格损伤。注入步骤之间的热工艺可防止顶部硅层完全非晶化，这是单步方法中的一种不可恢复的损坏。鉴于键合晶圆制造过程中存在轻微的晶体取向失配，采用高分辨率 X 射线衍射 (HRXRD) 技术来检查顶部硅的晶格质量。伪MOS晶体管表征技术证实了新方法的硬化能力。
A modified hardening technique is proposed to improve the total dose hardness of buried oxides in silicon-on-insulator (SOI) technologies using multiple-step Si+ ion implantation. Each implanting step introduces a dose of 5 ×1015/cm2 into buried oxides which creates an amorphous/crystalline (a/c) interface within the top Si layer. Inter-implant rapid thermal annealing (RTA) removes implant-induced lattice damages by moving a/c interface towards top silicon surface. The thermal processes between implant steps prevent top silicon layers from total amorphization which is a kind of unrecoverable damage in the single-step method. High Resolution X-Ray Diffraction (HRXRD) technique is exploited to inspect the lattice quality of top silicon in light of a slight crystal orientation mismatch during bonded-wafer fabrication. Pseudo-mos transistor characterization technique confirms the hardening capability of the new method.