Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation
Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation
复制标题
氧插入层对硼、磷和砷在硅中扩散以形成超浅结的影响
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
T. Liu
中科院分区：
文献类型：
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作者：
Xi Zhang;D. Connelly;H. Takeuchi;M. Hytha;R. Mears;L. Rubin;T. Liu
研究了高剂量离子注入和快速热退火形成超浅结时，氧插入层对硅中硼（B）、磷（P）和砷（As）扩散的影响。注入的掺杂剂的投影范围（Rp）比OI层的深度浅。二次离子质谱法用于比较具有OI层的硅样品中的掺杂剂分布与不具有OI层的对照样品中的掺杂剂分布。扩散被发现是基本上延迟的OI层的B和P，和较少的作为，提供较浅的结深度。实验结果表明，OI层的作用是阻止Si自介电体的扩散，从而有效地减少了超过OI层深度的介电辅助扩散。OI层还有助于在Si内保留更多的掺杂剂，计算机辅助设计模拟技术表明，这有利于实现具有较低薄层电阻的较浅结，以实现平面金属氧化物半导体场效应晶体管的进一步小型化，从而改善集成电路性能和每功能成本。和砷（As）的硅（Si），用于超浅结形成的高剂量离子注入和快速热退火。注入的掺杂剂的投影范围（Rp）比OI层的深度浅。二次离子质谱法用于比较具有OI层的硅样品中的掺杂剂分布与不具有OI层的对照样品中的掺杂剂分布。扩散被发现是基本上延迟的OI层的B和P，和较少的作为，提供较浅的结深度。实验结果表明，OI层的作用是阻止Si自介电体的扩散，从而有效地减少了超过OI层深度的介电辅助扩散。OI层还有助于在Si中保留更多的掺杂剂，计算机辅助设计模拟技术表明，这有利于实现更浅的…
The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower junctions with lower sheet resistance to enable further miniaturization of planar metal-oxide-semiconductor field-effect transistors for improved integrated-circuit performance and cost per function.The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing. The projected range (Rp) of the implanted dopants is shallower than the depth of the OI layers. Secondary ion mass spectrometry is used to compare the dopant profiles in silicon samples that have OI layers against the dopant profiles in control samples that do not have OI layers. Diffusion is found to be substantially retarded by the OI layers for B and P, and less for As, providing shallower junction depth. The experimental results suggest that the OI layers serve to block the diffusion of Si self-interstitials and thereby effectively reduce interstitial-aided diffusion beyond the depth of the OI layers. The OI layers also help to retain more dopants within the Si, which technology computer-aided design simulations indicate to be beneficial for achieving shallower...