Composition dependent metal-semiconductor transition in transparent and conductive La-doped BaSnO3 epitaxial films
Composition dependent metal-semiconductor transition in transparent and conductive La-doped BaSnO3 epitaxial films
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透明导电 La 掺杂 BaSnO3 外延薄膜中成分依赖的金属-半导体转变
DOI：
10.1063/1.4770299
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发表时间：
2012-12-10
影响因子：
4
通讯作者：
Dai, Jianming
中科院分区：
文献类型：
--
作者：
Liu, Qinzhuang;Liu, Jianjun;Dai, Jianming
采用脉冲激光沉积法在MgO衬底上外延生长了钙钛矿结构的（LaxBa 1-x）SnO 3（x = 0- 0. 20）（LBSO）薄膜，并对薄膜的结构、电学和光学性能进行了研究。结果表明，这些薄膜在可见光区具有90%以上的高透过率和掺杂浓度依赖的金属-半导体转变（MST）。随着LBSO薄膜中La含量从0增加到0.20，MST温度从105 K降低到32 K，然后又有规律地增加。用基于弱局域化和安德森局域化的两种不同导电模型解释了不同La掺杂浓度薄膜的低温半导化行为。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4770299]
Perovskite-structured (LaxBa1-x)SnO3 (x = 0-0.20) (LBSO) films were epitaxially grown on MgO substrates by pulsed laser deposition, and the structural, electrical, and optical properties of the films were investigated. Results show that these films exhibit a high transmittance of more than 90% in the visible region and dopant concentration-dependent metal-semiconductor transition (MST). With increasing La content from 0 to 0.20 in LBSO films, the MST temperatures decrease from 105 to 32 K and then increase again regularly. The semiconducting behaviors at low temperatures of the films with different La doping concentrations were explained by two different conductive models based on weak localization and Anderson localization. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770299]