Constrained martensitic transformations in TiNiCu films
Constrained martensitic transformations in TiNiCu films
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DOI：
10.1016/s0040-6090(03)00531-5
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发表时间：
2003-06-23
期刊：
影响因子：
2.1
通讯作者：
Wuttig, M
中科院分区：
文献类型：
--
作者：
Craciunescu, CM;Li, J;Wuttig, M
在加热的（1 0 0）Si衬底上，在不同温度下制备了TiNiCti形状记忆合金薄膜。当沉积温度高于200 ℃时，薄膜是结晶的。在TiNiCu/Si双晶中观察到的应力释放取决于组合物和沉积温度。对于较低的Cu含量，对于在低热弹应力下开始转变的膜观察到B2 -> R-相-> B19'序列的转变，并且当转变开始时的应力高时观察到B2 -> B19'序列。在高Cu含量下，低、高胁迫下的转化顺序分别为B2 -> B19-> B19'和B2 -> B19'。(C)2003 Elsevier Science B. V.保留所有权利。
TiNiCti shape memory alloy films were deposited at different temperatures on heated (1 0 0) Si cantilever-type substrates. The films are crystalline when deposited above 200 degreesC. The stress relief observed in the TiNiCu/Si bimorphs depends on the composition and the: deposition temperature. For lower Cu contents a B2 --> R-phase --> B19' sequence of transformations was observed for films that start to transform under a low thermoelastic stress and a B2 --> B19' sequence when the stress at the onset of the transformation is high. For higher Cu content the sequence of transformation observed was B2 --> B19 --> B19' and B2 --> B19' for low and high stress, respectively. (C) 2003 Elsevier Science B.V. All rights reserved.