SELECTIVE LASER ABLATION IN RESISTS AND BLOCK COPOLYMERS FOR HIGH RESOLUTION LITHOGRAPHIC PATTERNING
SELECTIVE LASER ABLATION IN RESISTS AND BLOCK COPOLYMERS FOR HIGH RESOLUTION LITHOGRAPHIC PATTERNING
复制标题
用于高分辨率光刻图案化的抗蚀剂和嵌段共聚物的选择性激光烧蚀
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
I. Rangelow
中科院分区：
文献类型：
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作者：
D. Olynick;P. Perera;A. Schwartzberg;Prashant Kulshreshta;D. G. Oteyza;N. Jarnagin;C. Henderson;Zhiwei Sun;I. Gunkel;T. Russell;M. Budden;I. Rangelow
本发明的各种实施例展示了选择性激光烧蚀工艺作为通过选择性去除一个嵌段来产生嵌段共聚物衍生的光刻图案的手段。描述了三种嵌段共聚物体系PS-b-PHOST、P2 VP-b-PS-b-P2 VP和P2 VP-b-PS-b-P2 VP，其中P2 VP用铂Pt渗透。当等离子体蚀刻无效时，在嵌段共聚物上的选择性激光烧蚀工艺提供了等离子体蚀刻的替代方案。
Various embodiments of the invention demonstrate selective laser ablation processes as a means to create a block copolymer derived lithographic pattern through the selective removal of one block. Three block copolymer systems described PS-b-PHOST, P2VP-b-PS-b-P2VP, and P2VP-b-PS-b-P2VP where the P2VP is infiltrated with platinum Pt. The selective laser ablation processes on block copolymers offers an alternative to plasma etching when plasma etching is not effective.