Effects of pressure on the carrier behavior of HgSe
Effects of pressure on the carrier behavior of HgSe
复制标题
压力对HgSe载流子行为的影响
DOI:
10.1080/08957959.2015.1082558
复制
发表时间:
2015
影响因子:
2
通讯作者:
Gao Chunxiao
中科院分区:
文献类型:
--
作者:
Hu Tingjing;Cui Xiaoyan;Li Xuefei;Wang Jingshu;Yang Jinghai;Gao Chunxiao
In situHall effect measurement of HgSe was conducted up to 31 GPa. It was found that the carrier parameters changed discontinuously at each phase transition. The resistivity variation under compression was described by the carrier parameters. The decrease in cinnabar mobility indicates that the interaction between the helical chains becomes stronger under pressure. Combining the results of experiment and theory calculation, it can be concluded that in the phase transition process from zinc blende through cinnabar to rock salt, if Hg atom is mainly displaced , hole will be generated and its concentration will increase; on the contrary, if Se atom is mainly displaced, electrons will be generated and their concentration will increase.