Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation
Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation
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DOI：
10.1109/tns.2011.2132739
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发表时间：
2011-04
影响因子：
1.8
通讯作者：
E. Martín;T. Nuns;J. David;O. Gilard;M. Boutillier;A. Penquer
中科院分区：
文献类型：
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作者：
E. Martín;T. Nuns;J. David;O. Gilard;M. Boutillier;A. Penquer
实验研究了电荷耦合器件（CCD）在Co-60和质子辐照下的暗电流演化。线性CCD在各种静态和动态偏置条件下进行辐照。退火效应进行了讨论，并在地面上的数据进行了比较，在飞行中的数据。CCD中电离诱导暗电流增加的结果表明了传感器操作条件和剂量率的影响，揭示了ELDRS样效应。
Dark current evolution in Charge Coupled Devices (CCD) is experimentally studied with Co-60 and proton irradiations. Linear CCDs are irradiated in various static and dynamic bias conditions. Annealing effects are discussed and on-ground data are compared to in-flight data. Presented results on ionization-induced dark current increase in CCDs have demonstrated the impact of the sensor operational conditions and dose rate, revealing an ELDRS-like effect.