An investigation of terahertz response in monocrystalline 6H-SiC for electro-optic sampling

An investigation of terahertz response in monocrystalline 6H-SiC for electro-optic sampling
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用于电光采样的单晶 6H-SiC 太赫兹响应研究

DOI:
10.7567/jjap.53.022601
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发表时间:
2014-01
影响因子:
1.5
通讯作者:
Wangzhou Shi
Wangzhou Shi
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Zhenyu Zhao;Zhizhan Chen;Wangzhou Shi

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从理论上研究了6 H-SiC单晶电光采样实现太赫兹探测的可行性。根据相位匹配条件的原理,对频率响应进行了仿真。利用Sellmeier方程计算了6 H-SiC的色散。在共线入射法中,通过不同激发波长下的频率响应函数模拟了太赫兹波的可探测带宽。的截止频率作为晶体厚度的函数被揭示。在非共线入射法中,利用硅棱镜将太赫兹辐射耦合到6 H-SiC单晶中,可以实现相位匹配。太赫兹辐射与入射光束的交叉角受硅棱镜的太赫兹色散和6 H-SiC的群折射率的影响。讨论了太赫兹相干长度与交叉角的关系。这两种方法都表明,6 H-SiC在515 nm处进行EO采样的宽带THz响应。6 H-SiC的EO采样灵敏度是GaP的三倍。结合高临界击穿场强,6 H-SiC被认为是探测高场强THz辐射的一种有希望的候选材料。
We theoretically investigate the feasibility of terahertz detection via electro-optic (EO) sampling using 6H-SiC single crystal. The frequency response is simulated based on the principle of phase-matching condition. The optical dispersion of 6H-SiC was calculated by Sellmeier equation. In collinear incidence approach, the THz detectable bandwidths are simulated by a frequency response function at different excitation wavelengths. The cut-off frequency as a function of crystal thickness is revealed. In non-collinear incidence approach, the phase-matching condition can be achieved by using a silicon prism to couple the THz radiation into 6H-SiC single crystal. The crossing angle between THz radiation and incident optical beam is subject to the THz dispersion of Si prism and group index of 6H-SiC. The relation between THz coherence length and crossing angle is discussed. Both approaches display that 6H-SiC performs a broadband THz response for EO sampling at 515 nm. The sensitivity of EO sampling of 6H-SiC is triple times higher than GaP. In combination of the high critical breakdown field, 6H-SiC is consider to be a promising candidate for detecting high field THz radiation.
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