Voltage-Controlled Bistable Resistive Switching Behavior Based on Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 Heterostructures
Voltage-Controlled Bistable Resistive Switching Behavior Based on Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 Heterostructures
复制标题
基于 Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 异质结构的压控双稳态电阻开关行为
DOI：
10.1166/sam.2016.2689
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发表时间：
2016-04
影响因子：
0.9
通讯作者：
Xue Desheng
中科院分区：
文献类型：
--
作者：
Wu Lei;Dong Chunhui;Zhang Chao;Jiang Changjun;Xue Desheng
实现多级存储的核心挑战在于寻求一种有效的方法，以可逆和可再现的方式在具有可控变量的不同状态之间切换。本文通过引入不同的电压脉冲，在Ni_（0.5）Zn_（0.5）Fe_2 O_4/BiFe_（0.5）O_3/Nb：SrTiO_3异质结中获得了非易失性的抗逆态。此外，两种类型的电阻开关行为，二极管类功能和传统的对称变化，通过调整电压的值或方向来实现。通过插入Ni0.5Zn0.5Fe2O4薄膜改善了电阻开关行为。同时表现出良好的稳定性、优异的保持力和抗疲劳特性。所观察到的BiFeO 3/Nb：SrTiO 3界面处的铁电极化反转调制导致了BiFeO 3/Nb：SrTiO 3的铁电记忆特性。Ni-Zn铁氧体薄膜层可以有效地提高样品的铁电极化，从而最终导致稳定性和耐久性的改善。本研究结果进一步增强了BiFeO 3基多功能材料在非易失性多电平存储器件中的适用性。
The central challenge in realizing multi-level storage lies in seeking an effective way to switch between distinct states with a controllable variable, in a reversible and reproducible manner. In this paper, with the introduction of different voltage pulses, nonvolatile bistable resistance states have been obtained in a Ni0.5Zn0.5Fe2O4/BiFeO3/Nb:SrTiO3 heterostructure. In addition, two types of resistive switching behaviors, diode-like features and traditional symmetric variations, are realized by tuning the value or direction of voltage. The resistive switching behavior is improved by inserting a Ni0.5Zn0.5Fe2O4 film. Good stability, excellent retention, and anti-fatigue characteristics are demonstrated at the same time. The observed bistable memory properties are attributed to modulation by the ferroelectric polarization reversal at the BiFeO3/Nb:SrTiO3 interface. Ni–Zn ferrite film layers can effectively increase the ferroelectric polarization of the sample, which eventually leads to an improvement in stability and durability. The present results further enhance the applicability of BiFeO3-based multifunctional materials in nonvolatile multi-level memory devices.