Progress in Performance Improvement and New Research Areas for Cost Reduction of 2G HTS Wires

Progress in Performance Improvement and New Research Areas for Cost Reduction of 2G HTS Wires
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DOI:
10.1109/tasc.2011.2107310
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发表时间:
2011-02
影响因子:
1.8
通讯作者:
V. Selvamanickam;Y. Chen;I. Kesgin;A. Guevara;T. Shi;Yao Yao-Yao;Y. Qiao;Yue Zhang;G. Majkic;G. Carota;A. Rar;Yi-Yuan Xie;J. Dackow;Boris Maiorov;L. Civale;V. Braccini;J. Jaroszynski;A. Xu;D. Larbalestier;R. Bhattacharya
V. Selvamanickam;Y. Chen;I. Kesgin;A. Guevara;T. Shi;Yao Yao-Yao;Y. Qiao;Yue Zhang;G. Majkic;G. Carota;A. Rar;Yi-Yuan Xie;J. Dackow;Boris Maiorov;L. Civale;V. Braccini;J. Jaroszynski;A. Xu;D. Larbalestier;R. Bhattacharya
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
V. Selvamanickam;Y. Chen;I. Kesgin;A. Guevara;T. Shi;Yao Yao-Yao;Y. Qiao;Yue Zhang;G. Majkic;G. Carota;A. Rar;Yi-Yuan Xie;J. Dackow;Boris Maiorov;L. Civale;V. Braccini;J. Jaroszynski;A. Xu;D. Larbalestier;R. Bhattacharya

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第二代(2G)高温超导线材目前正在使用金属有机化学气相沉积(MOCVD)工艺以300 A/cm的临界电流常规生产千米长度。虽然这一成就使几个原型设备,为了达到一个实质性的商业市场,2G高温超导导线的成本性能指标需要显着改善设备的操作条件。Zr掺杂是提高MOCVD基高温超导线材的临界电流性能的有效途径。在这项工作中,我们已经探索了修改锆掺杂的前体组合物,以实现三倍和两倍的增加,在研究和生产MOCVD系统的沉积速率分别。在0至30 T的磁场范围内,用改性的Zr掺杂的组合物制成的生产线在4.2 K下表现出50 MA/cm 2的自场临界电流密度,并且比我们先前的Zr掺杂的线高55至65%的性能。我们还开发了一种替代的低成本技术,即电沉积,在超导膜上存款银覆盖层。用电沉积银制成的导线能够承受与溅射银层相同水平的过电流。这一过程已成功地扩大到100米的长度。
Second-generation (2G) HTS wires are now being produced routinely in kilometer lengths using Metal Organic Chemical Vapor Deposition (MOCVD) process with critical currents of 300 A/cm. While this achievement is enabling several prototype devices, in order to reach a substantial commercial market, the cost-performance metrics of 2G HTS wires need to be significantly improved in device operating conditions. Zr-doping has been found to be an effective approach to improve in-field critical current performance of MOCVD-based HTS wires. In this work, we have explored modifications to the Zr-doped precursor compositions to achieve three and two-fold increase in deposition rate in research and production MOCVD systems respectively. Production wires made with modified Zr-doped compositions exhibit a self-field critical current density of 50 MA/cm2 at 4.2 K and a 55 to 65% higher performance than our previous wires with Zr-doping, over magnetic field range of 0 to 30 T. We have also developed an alternate, low-cost technique, namely electrodeposition, to deposit silver overlayer on superconducting film. Wires made with electrodeposited silver are able to sustain the same level of overcurrent as sputtered silver layers. This process has been successfully scaled up to 100 m lengths.