Strong broadband optical absorption in silicon nanowire films
Strong broadband optical absorption in silicon nanowire films
复制标题
DOI：
10.1117/1.2768999
复制
发表时间：
2007-01-01
影响因子：
1.5
通讯作者：
Rapol, Umakant
中科院分区：
文献类型：
--
作者：
Tsakalakos, Loucas;Balch, Joleyn;Rapol, Umakant
采用湿法刻蚀和化学气相沉积（CVD）方法在玻璃衬底上制备了硅纳米线（SiNW）薄膜，测量了其宽带光吸收特性，发现其吸收特性高于同等厚度的固体薄膜。所观察到的行为是充分解释的光散射和光捕获，虽然一些所观察到的吸收是由于在纳米线膜中的表面态的高密度，证明了氢钝化后的高残留的子带隙吸收的部分减少。时域有限差分模拟显示出强烈的共振内和之间的纳米线在一个垂直取向的阵列和描述实验吸收数据。这些结构在光学膜和光电器件应用中可能是令人感兴趣的。
The broadband optical absorption properties of silicon nanowire (SiNW) films fabricated on glass substrates by wet etching and chemical vapor deposition (CVD) have been measured and found tobe higher than solid thin films of equivalent thickness. The observed behavior is adequately explained by light scattering and light trapping though some of the observed absorption is due to a high density of surface states in the nanowires films, as evidenced by the partial reduction in high residual sub-bandgap absorption after hydrogen passivation. Finite difference time domain simulations show strong resonance within and between the nanowires in a vertically oriented array and describe the experimental absorption data well. These structures may be of interest in optical films and optoelectronic device applications.