Deposition of Cu2ZnSnS4 thin films by vacuum thermal evaporation from single quaternary compound source
Deposition of Cu2ZnSnS4 thin films by vacuum thermal evaporation from single quaternary compound source
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单一四元化合物源真空热蒸发沉积 Cu2ZnSnS4 薄膜
DOI：
10.1016/j.matlet.2012.01.018
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发表时间：
2012-04-15
影响因子：
3
通讯作者：
Yao, Min
中科院分区：
文献类型：
--
作者：
Shi, Chengwu;Shi, Gaoyang;Yao, Min
采用真空热蒸发法制备了Cu2ZnSnS4(CZTS)薄膜，采用真空热蒸发法制备了Cu2ZnSnS4(CZTS)薄膜，并在高纯氮气气氛中于300℃下进行了40min的热处理。X-射线衍射谱表明，CZTS薄膜经退火后由非晶态转变为具有钠钛矿结构的晶态。能谱分析表明，CZTS薄膜的成分为贫锌、富锡和富S。扫描电子显微镜(SEM)、紫外-可见-近红外(UV-VIS-NIR)光谱和霍尔测量表明，CZTS薄膜表面光滑、致密、均匀，直接带隙为1.55 eV，具有p型电导。制作的光伏器件的转换效率为0.36%，开路电压为493 mV，短路电流密度为1.76 mA·cm(-2)，填充因子为0.42。皇冠版权所有(C)2012由爱思唯尔出版。保留所有权利。
Cu2ZnSnS4 (CZTS) thin films were successfully deposited using vacuum thermal evaporation from single quaternary CZTS semiconducting material powder source, followed by annealing at 300 degrees C for 40 min under high purity N-2 atmosphere. X-ray diffraction (XRD) patterns indicated that as-deposited CZTS thin films transformed from amorphous state into crystalline state with kesterite structure after annealing. Energy dispersive X-ray spectroscopy (EDS) determined the compositions of the CZTS thin films were Zn-poor, Sn-rich and S-rich. Scanning electron microscope (SEM) images, ultraviolet-visible-near infrared (UV-Vis-NIR) spectra and the Hall measurements showed the annealed CZTS thin film exhibited a smooth, densely packed and homogeneous surface, a direct band gap of 1.55 eV and a p-type conductivity. The fabricated photovoltaic device obtained a conversion efficiency of 0.36%, open-circuit voltage of 493 mV, short-circuit current density of 1.76 mA.cm(-2), and fill factor of 0.42. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.