Grain Boundary Segregation of Impurities During Polycrystalline Colloidal Crystallization
Grain Boundary Segregation of Impurities During Polycrystalline Colloidal Crystallization
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DOI：
10.1021/acs.cgd.5b00646
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发表时间：
2015-10
影响因子：
3.8
通讯作者：
Sumeng Hu;J. Nozawa;H. Koizumi;K. Fujiwara;S. Uda
中科院分区：
文献类型：
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作者：
Sumeng Hu;J. Nozawa;H. Koizumi;K. Fujiwara;S. Uda
通过直接观察研究了多晶胶体结晶过程中晶界（GB）处的杂质分配。多晶颗粒具有与单胶体晶体类似的分配行为，遵循 Burton、Prim 和 Slichter (BPS) 模型。我们发现，在胶体晶体生长过程中，杂质在晶界处偏析，并且研究了相邻晶粒之间各种取向差角 (θ) 和生长速率 (V) 时晶界处的杂质浓度 (CGB)。发现 CGB 随着 θ 或 V 的增加而增加，并且当杂质的尺寸接近主体胶体颗粒的尺寸时也会增加。原位观察表明，GBs中掺入的杂质主要来自固液界面分离的杂质，CGB和生长速率呈现类似BPS的关系。
Impurity partitioning at grain boundaries (GBs) during polycrystalline colloidal crystallization has been investigated via direct observation. Polycrystalline grains have a partitioning behavior similar to that of single colloidal crystals, which follows the Burton, Prim, and Slichter (BPS) model. We have found that impurities segregate at GBs during colloidal crystal growth, and the impurity concentration at GBs (CGB) for various misorientation angles (θ) between adjacent grains and growth rates (V) has been investigated. CGB was found to increase with either increasing θ or V, and also when the size of the impurity is close to that of the host colloid particle. In situ observations reveal that impurities incorporated into GBs are supplied mostly from the impurities segregated at the solid–liquid interface, and CGB and the growth rate show a BPS-like relationship.