Construction of novel nanosecond temperature jump apparatuses applicable to Raman measurements and direct observation of transient temperature

Construction of novel nanosecond temperature jump apparatuses applicable to Raman measurements and direct observation of transient temperature
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DOI:
10.1366/0003702001948844
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发表时间:
2000-11-01
影响因子:
3.5
通讯作者:
Kitagawa, T
Kitagawa, T
中科院分区:
化学3区
文献类型:
--
作者:
Yamamoto, K;Mizutani, Y;Kitagawa, T

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构建了两种适用于时间分辨拉曼测量的纳秒温度跳变装置。T-跳跃是通过直接加热水,使用近红外(NIR)脉冲在1.89妈妈在一种类型和在1.56妈妈在其他。这两个近红外脉冲产生通过受激拉曼散射(SRS)的H-2或D-2激发的基本线的Q-开关的Nd:YAG激光器,其中一个单程配置与H-2是足够的1.89妈妈的脉冲帽子种子放大配置与D-2是必要的1.56妈妈的脉冲,种子放大配置产生了显着改善的转换效率,脉冲到脉冲的稳定性,和光束质量。这些装置被施加到瞬态拉曼测量的MoO 42-溶液,和瞬态温度的加热体积从反斯托克斯斯托克斯到斯托克斯拉曼强度的比率确定。探讨了在1.89或1.56 μ m的纳秒热脉冲照射下加热体积的温度的时间行为,并检查了其对热反应初级过程研究的适用性,很明显,在厚电池的情况下,升温的持续时间仅由样品的更换决定,而在厚电池的情况下,升温的持续时间由热传递和样品更换决定。对于薄电池的情况,而热扩散对于两种电池都无效。
Two types of nanosecond temperature jump (T-jump) apparatuses applicable to time-resolved Raman measurements were constructed. T-jump was achieved by direct heating of water using near-infrared (NIR) pulses at 1.89 mum in one type and at 1.56 mum in the other. The two NIR pulses were generated through stimulated Raman scattering (SRS) of H-2 or D-2 excited by the fundamental line of a Q-switched Nd:YAG laser, in which a single-pass configuration with H-2 was sufficient for 1.89 mum pulses hat a seeding-amplification configuration with D-2 was necessary for 1.56 mum pulses, The seeding-amplification configuration yielded significant improvements in conversion efficiency, pulse-to-pulse stability, and beam quality. These apparatuses were applied to transient Raman measurements of MoO42- solution, and transient temperatures of the heated volume were determined from ratios of anti-Stokes to Stokes Raman intensities. Temporal behaviors of the temperature of the heated volume upon illumination of nanosecond heat pulses at 1.89 or 1.56 mum were explored, and its applicability to studies on the primary process of thermal reactions was examined, It became clear that the continuation time of raised temperature is determined only by the replacement of the sample in the case of a thick cell and by both thermal transfer and sample replacement in the case of a thin cell, while thermal diffusion is not effective for either cell.