Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells
Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells
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DOI：
10.1103/physrevb.82.115316
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发表时间：
2010-09
影响因子：
3.7
通讯作者：
H. T. Duc;J. Förstner;T. Meier
中科院分区：
文献类型：
--
作者：
H. T. Duc;J. Förstner;T. Meier
本文分析了半导体量子阱威尔斯中单色圆偏振激光束激发的电荷和自旋注入电流的动力学。我们的微观方法是基于14 × 14 k · p能带结构理论结合多子带半导体布洛赫方程，允许在k空间中的光生载流子分布和相干性的详细分析。电荷和自旋注入电流的数值计算的[110]和[001]生长的GaAs量子威尔斯包括直流人口的贡献和交流的贡献所产生的子带间相干。的依赖性的注入电流的激发条件，特别是，光子能量的计算和讨论。
The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in semiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure theory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of the photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are numerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions and ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the excitation conditions, in particular, the photon energy are computed and discussed.