Growth and optoelectronic properties of Cu3NPdx thin films by solution deposition
Growth and optoelectronic properties of Cu3NPdx thin films by solution deposition
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溶液沉积 Cu3NPdx 薄膜的生长及其光电性能
DOI：
10.1016/j.jallcom.2019.152487
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发表时间：
2019
影响因子：
6.2
通讯作者：
Y.P. Sun
中科院分区：
文献类型：
--
作者：
H.Y. Tong;H.L. Zhang;Z.Z. Hui;X.W. Tang;R.H. Wei;W.H. Song;L. Hu;C.B. Cai;X.B. Zhu;Y.P. Sun
Cu3NPdxthin films have been successfully prepared on glass substrates by a facile chemical solution deposition. Phase composition and surface morphology are evaluated by X-ray diffraction and field-emission scanning electronic microscope. The X-ray diffraction and X-ray photoelectron spectroscopy results reveal that palladium will occupy the body centre position. Pd dependent electrical and optical properties of the Cu3NPdxthin films are investigated. Electrical conductivity can be greatly improved and the indirect bandgap is decreased with increasing the palladium doping, and the optical band gap can be adjusted within the range of 1.40–1.04 eV. The results will provide a facile solution route to synthesize high-quality copper nitride thin films with low-cost and controllable optoelectronic performance.
