Optical detection of deep electron traps in poly(p-phenylene vinylene) light-emitting diodes
Optical detection of deep electron traps in poly(p-phenylene vinylene) light-emitting diodes
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DOI：
10.1063/1.3656713
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发表时间：
2011-10-31
影响因子：
4
通讯作者：
Blom, Paul W. M.
中科院分区：
文献类型：
--
作者：
Kuik, Martijn;Vandenbergh, Joke;Blom, Paul W. M.
聚（对亚苯基亚乙烯基）（PPV）衍生物中的陷阱限制的电子电流可以使用高斯陷阱分布，位于PPV的最低未占分子轨道（LUMO）以下约0.75 eV的建模。光热偏转光谱测量和内部光发射光谱测量证实了一个高斯形陷阱分布的索赔中心在0.75 eV以下的PPV的LUMO。此外，两个PPV衍生物，在合成过程中纳入的构象缺陷的数量不同，表现出相同的电子捕获行为，表明陷阱不源于外在杂质的合成或聚合物链中的缺陷。(C)2011年美国物理学会。[doi：10.1063/1.3656713]
The trap-limited electron currents in poly(p-phenylene vinylene) (PPV) derivatives can be modeled using a Gaussian trap distribution that is positioned approximately 0.75 eV below the lowest unoccupied molecular orbital (LUMO) of PPV. Photothermal deflection spectroscopy measurements and internal photo-emission spectroscopy measurements confirm the claim of a Gaussian shaped trap distribution centered at 0.75 eV below the LUMO of PPV. Additionally, two PPV derivatives that differ in the number of conformational defects incorporated during synthesis exhibit identical electron trapping behavior, showing that the traps do not originate from extrinsic impurities of the synthesis or defects in the polymer chains. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3656713]