Study on temperature dependent resistivity of indium-doped cadmium zinc telluride
Study on temperature dependent resistivity of indium-doped cadmium zinc telluride
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DOI：
10.1088/0022-3727/42/3/035105
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发表时间：
2009-02
期刊：
影响因子：
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通讯作者：
Yadong Xu;W. Jie;P. Sellin;Tao Wang;Weihua Liu;G. Zha;P. Veeramani;C. Mills
中科院分区：
文献类型：
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作者：
Yadong Xu;W. Jie;P. Sellin;Tao Wang;Weihua Liu;G. Zha;P. Veeramani;C. Mills
采用改进的垂直Bridgman方法生长的掺杂铟的CdZnTe晶体，在220 ~ 320 K范围内进行了温度相关电阻率测量。通过拟合ln（ρ）与1/k0T图，证实了固定在中间间隙附近的费米能级，给出了高电阻率样品在价带以上的能量为0.63 eV和0.72 eV，掺杂水平分别为5.0 × 1016和4.8 × 1017 cm−3。当比较材料的电荷输运行为和掺杂浓度时，预计会有不同的主导深能级缺陷或复合物用于固定费米能级，从而产生高电阻率。然而，对于在cm−3 In下掺杂9.7 × 1017的低电阻率样品，在正偏置电压和负偏置电压下，分别计算出费米能级导带以下的两个能量分别为0.24 eV和0.33 eV。
Indium-doped CdZnTe crystals, grown by the modified vertical Bridgman method, were characterized by temperature dependent resistivity measurements in the range from 220 to 320 K. The Fermi level, pinned near the midgap, was confirmed by fitting ln(ρ) versus 1/k0T plots, giving energies of 0.63 eV and 0.72 eV above the valence band for the high resistivity samples, with doping levels of 5.0 × 1016 at cm−3 and 4.8 × 1017 at cm−3, respectively. Different dominant deep level defects or complexes for pinning the Fermi level, and hence producing high resistivity, were expected when comparing the charge transport behaviours of the materials and the dopant concentration. However, two energies of 0.24 eV and 0.33 eV, below the conduction band for the Fermi level, were calculated at positive and negative bias voltages, respectively, for a low resistivity sample doped by 9.7 × 1017 at cm−3 In.