Erratum: “Band structures and thermoelectric properties of the clathrates Ba8Ga16Ge30, Sr8Ga16Ge30, Ba8Ga16Si30, and Ba8In16Sn30” [J. Chem. Phys. 115, 8060 (2001)]
Erratum: “Band structures and thermoelectric properties of the clathrates Ba8Ga16Ge30, Sr8Ga16Ge30, Ba8Ga16Si30, and Ba8In16Sn30” [J. Chem. Phys. 115, 8060 (2001)]
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勘误表：“包合物 Ba8Ga16Ge30、Sr8Ga16Ge30、Ba8Ga16Si30 和 Ba8In16Sn30 的能带结构和热电性能”[J. Phys. 115, 8060 (2001)]
DOI：
10.1063/1.1473816
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发表时间：
2002
影响因子：
4.4
通讯作者：
H. Metiu
中科院分区：
文献类型：
--
作者：
N. Blake;S. Latturner;J. Bryan;G. Stucky;H. Metiu
最近对其他热电系统的研究帮助我们发现了负责计算塞贝克系数的算法中的错误。论文中报告的所有塞贝克系数都有 1 倍的误差。因此，在第 8065 页的图 7 和第 8068 页的图 12 中，横坐标应正确读取 S 而不是 S。本文的目的是通过评估性能因数 ZT S2 T/ 来评估这些材料作为热电器件的潜在用途。因此，这个错误并没有改变本文的重要结论。然而，在解释实验材料是 p 掺杂还是 n 掺杂时，S 的符号确实很重要。对于p掺杂材料S 0 而对于n掺杂材料S 0 ，而不是相反。因此，案文中有几处地方需要修改。第 8065 页第 1 段目前为：
Recent work on other thermoelectric systems have helped us to find an error in the algorithm responsible for the calculation of the Seebeck coefficient. All Seebeck coefficients reported in the paper are in error by a factor of 1. Thus in Fig. 7 of page 8065 and Fig. 12 on page 8068 the abscissa should properly read S and not S. The purpose of this paper was to evaluate the potential use of these materials as thermoelectric devices through evaluation of the figure-ofmerit ZT S2 T/. Thus, this error does not alter the important conclusions of this paper. However, in interpreting whether experimental materials are either p-or n-doped, the sign of S does matter. For p-doped materials S 0 while for n-doped materials S 0, and not the other way around. Thus there are several places in the text that should be revised. Page 8065 paragraph 1, which currently reads,