Zn‐induced impurity levels in layer semiconductor InSe
Zn‐induced impurity levels in layer semiconductor InSe
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DOI：
10.1063/1.344075
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发表时间：
1989-10
影响因子：
3.2
通讯作者：
S. Shigetomi;H. Ohkubo;T. Ikari;H. Nakashima
中科院分区：
文献类型：
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作者：
S. Shigetomi;H. Ohkubo;T. Ikari;H. Nakashima
用光致发光(PL)、霍尔效应(HE)和深能级瞬变光谱(DLTS)研究了掺锌InSe中的杂质能级。前人的光致发光光谱分析表明，辐射跃迁是由施主-锌受体对主导的。在本工作中，利用HE和DLTS测量的组合数据对深度受体能级进行了搜索。我们发现，与层间锌原子形成的缺陷或缺陷复合体有关的深受主能级位于价带上方约0.6 eV处。
The impurity levels in Zn‐doped InSe have been investigated by photoluminescence (PL), Hall effect (HE), and deep‐level transient spectroscopy (DLTS). Previous analysis by PL spectra shows that the radiative transition is dominated by donor‐Zn acceptor pairs. In the present work, a search was made for the deep acceptor level using the combined data from HE and DLTS measurements. We find that the deep acceptor level, which is associated with defects or defect complexes formed by Zn atoms in the interlayer, is located about 0.6 eV above the valence band.