Synthesis and optical properties of Ge clathrate films with and without Al doping
Synthesis and optical properties of Ge clathrate films with and without Al doping
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DOI：
10.35848/1347-4065/acade8
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发表时间：
2023-05-01
影响因子：
1.5
通讯作者：
Kume, Tetsuji
中科院分区：
文献类型：
--
作者：
Aye, Tun Naing;Kawaura, Yuto;Kume, Tetsuji
以Al含量为0-7原子%的非晶Ge薄膜为起始材料，尝试制备Al掺杂II型Ge包合物Na-x(AlyGe1-y)(136)薄膜。使用我们最近建立的方法进行制备，该方法能够在高真空下同时或随后进行退火的同时在起始材料上沉积Na。 X射线衍射测量证实了制备的薄膜中的II型包合物结构。在含 Al 样品中发现的较小晶格常数和与 Al-Ge 相关的拉曼峰表明笼形结构中 Al 部分取代了 Ge。光传输测量表明，由于含有 Al，基本吸收边向更高能量移动。
An attempt to prepare thin films of Al-doped type II Ge clathrates Na- x (Al y Ge1-y )(136) was made by using amorphous Ge films including 0-7 atomic percent Al as the starting materials. The preparations were conducted using our recently established method, which enables the deposition of Na on the starting material with simultaneous or subsequent annealing under a high vacuum. X-ray diffraction measurements confirmed the type II clathrate structure in the prepared film. Smaller lattice constants and an Al-Ge related Raman peak found in the Al-included samples suggested the partial substitution of Al for Ge in the clathrate structure. Optical transmission measurements indicated that the fundamental absorption edge is shifted to higher energies due to the inclusion of Al.