Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC
Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC
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DOI：
10.1063/1.3456159
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发表时间：
2010-08
影响因子：
3.2
通讯作者：
K. Kawahara;J. Suda;G. Pensl;T. Kimoto
中科院分区：
文献类型：
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作者：
K. Kawahara;J. Suda;G. Pensl;T. Kimoto
用深能级瞬态光谱法研究了热氧化对4H-SiC禁带全能级内深能级的影响。深能级是由离子注入产生的。离子注入和1700℃高温退火后的n型样品中，低剂量注入的主要缺陷为IN3 （Z1/2: EC−0.63 eV）和IN9 (EH6/7: EC−1.5 eV)，高剂量注入的主要缺陷为IN8 （EC−1.2 eV）。在1150℃的温度下，通过热氧化可以显著地减少这些缺陷。然而，在p型样品中，IP8 （HK4: EV+1.4 EV）仍然存在，并且在低剂量注入样品的热氧化后出现IP4 （HK0: EV+0.72 EV）等额外缺陷。在高剂量注入的p型样品中，IP5 （HK2: EV+0.85 EV）、IP6 （EV+1.0 EV）和IP7 （HK3: EV+1.3 EV）三个优势水平在1150°C氧化后显著降低。热氧化后的p型4H-SiC的主要缺陷IP4可以通过随后在1400℃的Ar中退火而降低。这些把…
The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of the band gap of 4H–SiC by deep level transient spectroscopy. The deep levels are generated by ion implantation. The dominant defects in n-type samples after ion implantation and high-temperature annealing at 1700 °C are IN3 (Z1/2: EC−0.63 eV) and IN9 (EH6/7: EC−1.5 eV) in low-dose-implanted samples, and IN8 (EC−1.2 eV) in high-dose-implanted samples. These defects can remarkably be reduced by thermal oxidation at 1150 °C. In p-type samples, however, IP8 (HK4: EV+1.4 eV) survives and additional defects such as IP4 (HK0: EV+0.72 eV) appear after thermal oxidation in low-dose-implanted samples. In high-dose-implanted p-type samples, three dominant levels, IP5 (HK2: EV+0.85 eV), IP6 (EV+1.0 eV), and IP7 (HK3: EV+1.3 eV), are remarkably reduced by oxidation at 1150 °C. The dominant defect IP4 observed in p-type 4H–SiC after thermal oxidation can be reduced by subsequent annealing in Ar at 1400 °C. These pheno...