Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
复制标题
具有由反向偏置控制的可变阈值电压的低功耗和低压 MOSFET
DOI：
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发表时间：
2000
影响因子：
0.5
通讯作者：
M. Takamiya
中科院分区：
文献类型：
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作者：
T. Hiramoto;M. Takamiya
从背栅控制和体效应因子的角度研究了低功耗低压MOSFET的特性折衷。先前报道的MOSFET结构根据背栅结构分为四类。结果表明，具有固定的背偏置的MOSFET在低电压下，无论器件结构如何，只有有限的电流驱动，而体与栅极相连的动态阈值MOSFET的电流驱动随着体效应因子的增加而增强。我们提出了一种新的动态阈值MOSFET，电诱导体（EIB）DTMOS，它具有非常大的体效应因子在低阈值电压和高电流驱动在低电源电压。关键词：MOSFET，低功耗，低电压，可变阈值，
We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage. key words: MOSFET, low power, low voltage, variable thresh-