Engineering of absorbing medium for quantum dot infrared photodetectors
Engineering of absorbing medium for quantum dot infrared photodetectors
复制标题
量子点红外光电探测器吸收介质工程
DOI：
10.1117/12.2024458
复制
发表时间：
2013
影响因子：
9.1
通讯作者：
S. Oktyabrsky
中科院分区：
文献类型：
--
作者：
M. Yakimov;A. Sergeev;V. Pogrebnyak;A. Varghese;V. Tokranov;G. Thomain;N. Vagidov;V. Mitin;S. Oktyabrsky
量子阱红外探测器广泛应用于液氮温度下的焦平面阵列。与量子阱结构相比，量子点（QD）纳米材料通过设计带电量子点形成的纳米级电位分布来控制光电子过程更具灵活性。内置电荷量子点抑制了量子点对光电子的捕获，并对红外辐射提供了强耦合。本文综述了基于强选择性掺杂Q-BIC介质的光电探测器的设计、制造和表征方法。Q-BIC介质的表征包括结构、光谱（光致发光测量）和电学表征（暗电流、I-V测量）。经过几个设计-生长-表征周期，我们获得了相对较高的量子点密度，与量子点生长相关的缺陷浓度较小，并且抑制了量子点的载流子捕获。采用优化后的Q-BIC介质制备了Q-BIC红外探测器。我们研究了光响应的光谱和温度依赖关系，以及它对Q-BIC介质偏置电压和参数的依赖关系。
Quantum well infrared photodetectors are widely used in focal plane arrays operating at liquid nitrogen temperatures. Compared to quantum-well structures, quantum dot (QD) nanomaterials are more flexible to control photoelectron processes by engineering of the nanoscale potential profiles formed by charged quantum dots. Quantum dots with builtin charge (Q-BIC) suppress capture of photoelectrons by QDs and provide strong coupling to infrared radiation. We review design approaches, fabrication and characterization of photodetectors based on Q-BIC media with strong selective doping to increase the built-in dot charge. Characterization of Q-BIC media includes the structural, spectral (photoluminescence measurements) and electrical characterization (dark current, I-V measurements). After several design-growth-characterization cycles we reached relatively high density of quantum dots, small concentration of defects related to quantum dot growth, and suppressed carrier capture by QDs. Optimized Q-BIC media were used for fabrication of Q-BIC IR photodetectors. We studied spectral and temperature dependences of photoresponse and also its dependences on bias voltage and parameters of Q-BIC medium.