Controlled reversal of Co/Pt Dots for nanomagnetic logic applications
Controlled reversal of Co/Pt Dots for nanomagnetic logic applications
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DOI：
10.1063/1.3675171
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发表时间：
2012-04-01
影响因子：
3.2
通讯作者：
Becherer, Markus
中科院分区：
文献类型：
--
作者：
Breitkreutz, Stephan;Kiermaier, Josef;Becherer, Markus
垂直多层膜的畴反转是由各向异性的固有分布控制的。然而，控制场耦合、单畴Co/Pt点的开关场分布（SFD）是构建用于纳米磁逻辑应用的大型集成系统的关键。本文采用部分Ga+聚焦离子束（FIB）辐照单畴Co/Pt点，局部降低了各向异性，使薄膜固有的SFD失效。与未辐照点相比，开关场的可控减小取决于辐照的大小和剂量。生长和辐照后Co/Pt堆叠的TEM图像显示，由于Ga+离子的影响，Co/Pt堆叠的形貌从单一的Co/Pt界面转变为混合和随机取向的晶粒。该方法非常适合于控制场耦合逻辑器件的开关行为。实验结果用于演示纳米磁扇出操作。(C) 2012年美国物理研究所。(doi: 10.1063/1.3675171)
Domain reversal in perpendicular multilayer films is governed by an intrinsic distribution of anisotropy. However, control of the switching field distribution (SFD) of field-coupled, single domain Co/Pt dots is the key to building large integrated systems for nanomagnetic logic applications. In this work, partial Ga+ focused ion beam (FIB) irradiation of single-domain Co/Pt dots is employed which locally reduces the anisotropy and renders the film-inherent SFD ineffective. Controlled reduction in the switching field compared to non-irradiated dots is achieved, depending on size and dose of irradiation. TEM images of an as-grown and irradiated Co/Pt stack show a change in morphology from distinct Co/Pt interfaces to intermixed and randomly oriented grains due to the Ga+ ion impact. The presented method is highly suitable to control the switching behavior in field-coupled logic devices. Experimental results are used to demonstrate a nanomagnetic fanout operation. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675171]