Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
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具有 p-GaN 栅极的 AlGaN/GaN 异质结构场效应晶体管中的漏极偏置应力和记忆效应
DOI：
10.1002/pssc.201100397
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发表时间：
2011
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et al
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作者：
T.Sugiyama;et al
我们测量了a面和c面GaN衬底上AlGaN/ GaN异质结构场效应晶体管（HFET）的漏极偏置应力效应和电流崩塌。a-平面AlGaN/GaN HFET（a-HFET）显示具有阈值电压（Vth=-1.8V）的小电流崩溃。另一方面，具有相同势垒厚度（20 nm）的c面HFET（c-HFET）显示出小的电流崩塌，尽管Vth为负大（Vth=-4 V）。与GaN上的常规c-HFET相比，c-HFET中的电流崩塌并不大。还测量了蓝宝石上的c-HFET。蓝宝石衬底上的HFET的电流崩塌比GaN衬底上的大。薄势垒c-HFET（Vth=-1.8 V）中的电流崩塌特别大。因此，a-平面器件有希望实现小Vth或正Vth以及小电流崩溃。（© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We measured drain bias stress effects and current collapse in AlGaN/ GaN heterostructure field‐effect transistors (HFETs) on a‐plane and c‐plane GaN substrates. An a‐plane AlGaN/GaN HFET (a‐HFET) shows small current collapse with a threshold voltage (Vth= ‐1.8 V). On the other hand, a c‐plane HFET (c‐HFET) with the same barrier thickness (20 nm) shows a small current collapse, although Vthwas negatively large (Vth= ‐4 V).Current collapse in a‐HFET was not large compared with that in conventional c‐HFET on GaN. A c‐HFET on sapphire was also measured. The current collapses in HFETs on sapphire were larger than that in HFETs on a GaN substrate. The current collapses in the thin‐barrier c‐HFET (Vth= ‐1.8 V) were particularly large. Therefore, an a‐plane device is promising for a small or positiveVthwith small current collapse. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)