Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics
Ultrathin quasi-2D amorphous carbon dielectric prepared from solution precursor for nanoelectronics
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DOI：
10.1038/s44172-023-00141-9
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发表时间：
2023-12
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影响因子：
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通讯作者：
Fufei An;Congjun Wang;Viet Hung Pham;A. Borisevich;Jiangchao Qian;Kaijun Yin;Saran Pidaparthy
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文献类型：
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作者：
Fufei An;Congjun Wang;Viet Hung Pham;A. Borisevich;Jiangchao Qian;Kaijun Yin;Saran Pidaparthy
厚度保持在原子尺度但主要在横向延伸的材料提供了对许多新兴应用具有吸引力的特性。然而，与晶体薄膜相比，以高度无序的非晶态形式合成原子薄膜，由于其亚稳性质，避免了与晶界相关的不均匀和缺陷，是具有挑战性的。在这里，我们提出了一种可扩展的基于溶液的策略来制备大面积、独立的准2D非晶态碳纳米膜，其主要的sp2键和厚度降至1-2个原子层，以煤基碳点为前驱体。这些原子薄的非晶碳膜机械强度高，模数为400 ± 100 GPA，具有坚固的介电性能，介电强度高于20 mV cm−1，漏电流密度低于10−4A cm−2，厚度为三原子层。它们可以实现为晶体管中的溶液沉积超薄栅电介质或忆阻器中的离子传输介质，从而实现卓越的器件性能和时空一致性。
Materials keeping thickness in atomic scale but extending primarily in lateral dimensions offer properties attractive for many emerging applications. However, compared to crystalline counterparts, synthesis of atomically thin films in the highly disordered amorphous form, which avoids nonuniformity and defects associated with grain boundaries, is challenging due to their metastable nature. Here we present a scalable and solution-based strategy to prepare large-area, freestanding quasi-2D amorphous carbon nanomembranes with predominant sp2bonding and thickness down to 1–2 atomic layers, from coal-derived carbon dots as precursors. These atomically thin amorphous carbon films are mechanically strong with modulus of 400 ± 100 GPa and demonstrate robust dielectric properties with high dielectric strength above 20 MV cm−1and low leakage current density below 10−4A cm−2through a scaled thickness of three-atomic layers. They can be implemented as solution-deposited ultrathin gate dielectrics in transistors or ion-transport media in memristors, enabling exceptional device performance and spatiotemporal uniformity.