Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode

Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode
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使用膜分布反馈激光器和 p-i-n 光电二极管在 Si 衬底上集成光链路

DOI:
10.1109/jstqe.2017.2716184
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发表时间:
2017
影响因子:
4.9
通讯作者:
Shigehisa Arai
Shigehisa Arai
中科院分区:
工程技术2区
文献类型:
--
作者:
Daisuke Inoue;Takuo Hiratani;Kai Fukuda;Takahiro Tomiyasu;Zhichen Gu;Tomohiro Amemiya;Nobuhiko Nishiyama;Shigehisa Arai

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片上光互连是一种很有前途的技术,用于布线未来的大规模集成电路,作为一种手段,以减轻传统布线层的相当大的功耗。在这里,我们制作了一个集成的光链路,使用薄膜分布反馈(DFB)激光器和p-i-n光电二极管(PD)的对接内置耦合几何形状。光链路通过苯并环丁烯键合形成在Si衬底上。集成的DFB激光器显示出0.48 mA的低阈值电流。DFB激光器和p-i-n PD之间的光传输通过光链路的静态测量来确认。在2.73 mA DFB激光器偏置电流和-3 V p-i-n PD偏置电压下,光链路具有11.3 GHz的3 dB带宽。利用字长为231-1的不归零伪随机序列进行了光链路的数据传输实验。在DFB激光器偏置电流为2.5mA时,成功地实现了10 Gbit/s的数据传输,误码率为6 × 10- 7。
On-chip optical interconnection is a promising technology for wiring future large-scale integrated circuits, as a means to mitigate the considerable power dissipation of traditional wiring layers. Here, we fabricate an integrated optical link using a membrane distributed-feedback (DFB) laser and a p-i-n photodiode (PD) in a butt-jointed built-in coupling geometry. The optical link is formed on a Si substrate by benzocyclobutene bonding. The integrated DFB laser shows a low-threshold current of 0.48 mA. Light transmission between the DFB laser and the p-i-n PD is confirmed with static measurements of the optical link. The optical link has a 3-dB bandwidth of 11.3 GHz at a 2.73 mA DFB laser bias current and a -3 V p-i-n PD bias voltage. A data transmission experiment of the optical link is performed, using a nonreturn to zero, pseudorandom-bit-sequence with a word length of 231-1 signals. With a DFB laser bias current of 2.5 mA, 10 Gbit/s data transmission with a bit-error-rate of 6 × 10-7is successfully achieved.