Improvements to the alignment process in a commercial vector scan electron beam lithography tool
Improvements to the alignment process in a commercial vector scan electron beam lithography tool
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DOI：
10.1016/j.mee.2008.01.081
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发表时间：
2008-05-01
影响因子：
2.3
通讯作者：
Weaver, J. M. R.
中科院分区：
文献类型：
--
作者：
Docherty, K. E.;Thorns, S.;Weaver, J. M. R.
本文研究了用于基于相关的对准系统的标记图案的理想特性，并证明了优于 1 nm 的对准精度。已经开发了用于评估不同类别标记模式的框架，并且定义了用于基于相关性的对齐的标记模式的品质因数。我们证明彭罗斯平铺对于基于相关的对齐具有许多理想的属性。基于相关性并使用源自彭罗斯平铺的标记图案的对准系统已在商用 Vistec VB6 UHR EWF 电子束光刻工具上开发和实施。介绍了一种使用重叠光栅和基于傅立叶变换的分析方案来测量亚纳米级对准的新方法。 (C) 2008 Elsevier B.V. 保留所有权利。
This paper examines the desirable properties of marker patterns for use in correlation-based alignment systems and demonstrates alignment accuracies of better than 1 nm. A framework for evaluating different classes of marker patterns has been developed and a figure of merit for marker patterns used in correlation-based alignment has been defined. We show that Penrose tilings have many desirable properties for correlation-based alignment. An alignment system based on correlation and using marker patterns derived from Penrose tilings has been developed and implemented on a commercial Vistec VB6 UHR EWF electron beam lithography tool. A new method of measuring alignment at the sub-nm level using overlaid gratings and a Fourier Transform based analysis scheme is introduced. (C) 2008 Elsevier B.V. All rights reserved.