Mass transport through dislocation network in solid He4
Mass transport through dislocation network in solid He4
复制标题
固体 He4 中通过位错网络的质量传输
DOI:
10.1103/physrevb.99.140502
复制
发表时间:
2019
影响因子:
3.7
通讯作者:
Chan, Moses H.
中科院分区:
文献类型:
--
作者:
Shin, Jaeho;Chan, Moses H.
We studied the transport ofatoms through 2.5-mm-thick solidsamples sandwiched between two superfluid leads with five different tailor-made sample cells. Measurements in a cell with a barrier at the center of the solid samples and in a cell filled with silica aerogel establish the causal relation between the observed mass flow and the dislocation network in the solid sample. Comparing the results from these cells and prior measurements on solid samples with thicknesses of 2 cm andreveals that the mass flow rate decreases logarithmically with the thickness of the solid. Interestingly, the mass flow exhibits both superfluid and bosonic Luttinger liquid characteristics at low temperature.