Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si
Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si
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SiGeSn/GeSn/SiGeSn 量子阱结构和硅上光泵浦激光器的研究
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Shu Yu
中科院分区：
文献类型：
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作者：
Yiyin Zhou;J. Margetis;G. Abernathy;Wei Dou;P. Grant;Bader Alharthi;W. Du;Alicia Wadsworth;Q. Guo;Huong Tran;Solomon Ojo;A. Mosleh;S. Ghetmiri;G. Thompson;Jifeng Liu;G. Sun;R. Soref;J. Tolle;Baohua Li;M. Mortazavi;Shu Yu
对 SiGeSn/GeSn/SiGeSn 单量子阱和多量子阱 (MQW) 结构进行了表征。 SiGeSn 势垒提供了强大的载流子限制和足够的势垒高度，导致 MOW 器件产生高达 90 K 的激光。© 2019 作者
SiGeSn/GeSn/SiGeSn single and multiple quantum well (MQW) structures were characterized. The SiGeSn barriers provide a strong carrier confinement with sufficient barrier height, leading to the lasing with MOW device up to 90 K. © 2019 The Author(s)