The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)
The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)
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GaAs(110) 上外延 Fe(110) 薄膜的反常霍尔效应
DOI：
10.1007/s11434-015-0831-y
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发表时间：
2015
期刊：
影响因子：
18.9
通讯作者：
Jin Xiaofeng
中科院分区：
文献类型：
--
作者：
Xu Jianli;Wu Lin;Li Yufan;Tian Dai;Zhu Kai;Gong Xinxin;Jin Xiaofeng
本文研究了GaAs（110）衬底上外延Fe（110）薄膜的反常霍尔效应与薄膜厚度和温度的关系。首次从实验上确定了Berry曲率引起的本征贡献为996。结合先前获得的821in Fe（111）和1100in Fe（001），我们明确地表明了Berry曲率对单晶Fe中反常霍尔效应的各向异性贡献。
The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996is determined experimentally for the first time. Together with 821in Fe(111) and 1100in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.