Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors
Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors
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DOI：
10.1002/adma.201702523
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发表时间：
2017-09-27
影响因子：
29.4
通讯作者：
McCulloch, Iain
中科院分区：
文献类型：
--
作者：
Chen, Hu;Hurhangee, Michael;McCulloch, Iain
已知有机半导体聚合物的电荷载流子迁移率在聚合物的能量无序最小化时增强。稠合的平面芳环结构有助于减少聚合物构象紊乱，如通过含有引达省二噻吩（IDT）重复单元的聚合物所证明的，其在薄膜晶体管（TFT）器件中具有低Urbach能量和高迁移率。扩大这个设计主题，含有二噻吩茚并芴重复单元的共聚物的合成，延长了稠合的芳香族结构与两个额外的苯环，进一步刚性化的聚合物主链。制备了一系列共聚物，并对其电性能和薄膜形态进行了评价，与IDT类似物相比，co-苯并噻二唑聚合物的空穴迁移率增加了两倍，在底栅顶接触有机场效应晶体管中达到了几乎3 cm（2）V-1 s（-1）的值。
The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm(2) V-1 s(-1) in bottom-gate top-contact organic field-effect transistors.