Random networks of carbon nanotubes as an electronic material
Random networks of carbon nanotubes as an electronic material
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DOI：
10.1063/1.1564291
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发表时间：
2003-03-31
影响因子：
4
通讯作者：
Park, D
中科院分区：
文献类型：
--
作者：
Snow, ES;Novak, JP;Park, D
我们报告的随机网络的单壁碳纳米管制造成薄膜晶体管的输运特性。在低的纳米管密度下（大约1 μ m（-2）），网络是电连续的，并且表现得像p型半导体，其场效应迁移率大约为10 cm（2）/V s，晶体管的通断比大约为10（5）。在更高的密度（类似于10 μ m-2）的场效应迁移率可以超过100 cm（2）/V s，但是，在这种情况下，网络的行为就像一个窄带隙半导体与高关态电流。在没有精确组装纳米管的情况下实现有用的器件特性的事实表明，随机碳纳米管网络可能是用于薄膜晶体管应用的可行材料。(C)2003年，美国物理学会。
We report on the transport properties of random networks of single-wall carbon nanotubes fabricated into thin-film transistors. At low nanotube densities (similar to1 mum(-2)) the networks are electrically continuous and behave like a p-type semiconductor with a field-effect mobility of similar to10 cm(2)/V s and a transistor on-to-off ratio similar to10(5). At higher densities (similar to10 mum-2) the field-effect mobility can exceed 100 cm(2)/V s; however, in this case the network behaves like a narrow band gap semiconductor with a high off-state current. The fact that useful device properties are achieved without precision assembly of the nanotubes suggests the random carbon nanotube networks may be a viable material for thin-film transistor applications. (C) 2003 American Institute of Physics.