Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers

Length dependence of feedback sensitivity of InAs/GaAs quantum dot lasers
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InAs/GaAs 量子点激光器反馈灵敏度的长度依赖性

DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
B. Corbett
B. Corbett
中科院分区：
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文献类型：
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作者：
O. Carroll;S. Hegarty;G. Huyet;B. Corbett

文献摘要

被引文献

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研究了发射频率为1.3 /spl μ l /m的量子点半导体激光器对器件长度的反馈灵敏度。发现短腔长度的器件比长腔长度的器件对反馈更敏感。这是由于/spl α /-因子和弛豫振荡阻尼率随器件长度的增加而降低。
The feedback sensitivity of quantum dot semiconductor lasers emitting at 1.3 /spl mu/m against device length has been studied. Devices with short cavity length were found to be more sensitive to feedback than longer devices. This has been ascribed to a decrease in both the /spl alpha/-factor and relaxation oscillation damping rate with increasing device length.