Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors
Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors
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DOI：
10.1063/1.5111180
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发表时间：
2019-08
影响因子：
4
通讯作者：
Hao Zhu;C. Richter;Sheng Yu;H. Ye;M. Zeng;Qiliang Li
中科院分区：
文献类型：
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作者：
Hao Zhu;C. Richter;Sheng Yu;H. Ye;M. Zeng;Qiliang Li
Aharonov-Bohm（AB）振荡是一种量子力学现象，它揭示了电磁势与电子波函数的耦合，影响波函数的相位。这种量子干涉效应可以通过对低维电子态的磁输运测量来证明。在这里，我们报告的实验观察到的异常AB振荡的增强型拓扑绝缘体Bi 2Se 3纳米线场效应晶体管（FET）在强表面无序，这是不同于报告的AB振荡拓扑绝缘体纳米结构。纳米线FET的周围栅极引起化学势的可调谐性，并在表面态上引入强烈的无序，导致具有异常h/e周期的初级振荡。此外，振荡表现出显着的依赖于栅极电压，这已经初步解释了与表面导电沟道的量子化。实验演示对于通过电学方法进一步探索量子相位干涉非常有吸引力，使其能够在未来的信息和电磁传感技术中应用。Aharonov-Bohm（AB）振荡是一种量子力学现象，揭示了电磁势与电子波函数的耦合，影响波函数的相位。这种量子干涉效应可以通过对低维电子态的磁输运测量来证明。在这里，我们报告的实验观察到的异常AB振荡的增强型拓扑绝缘体Bi 2Se 3纳米线场效应晶体管（FET）在强表面无序，这是不同于报告的AB振荡拓扑绝缘体纳米结构。纳米线FET的周围栅极引起化学势的可调谐性，并在表面态上引入强烈的无序，导致具有异常h/e周期的初级振荡。此外，振荡表现出显着的依赖于栅极电压，这已经初步解释了与表面导电沟道的量子化。The experi.
Aharonov-Bohm (AB) oscillation is a quantum mechanical phenomenon which reveals the coupling of electromagnetic potentials with the electron wave function, affecting the phase of the wave function. Such a quantum interference effect can be demonstrated through the magnetotransport measurement focusing on low-dimensional electronic states. Here, we report the experimental observation of anomalous AB oscillation in an enhanced-mode topological insulator Bi2Se3 nanowire field-effect transistor (FET) under strong surface disorder, which is different from the reported AB oscillation in topological insulator nanostructures. The surrounding gate of the nanowire FET gives rise to tunability of the chemical potential and introduces strong disorder on the surface states, leading to primary oscillation with an anomalous h/e period. Furthermore, the oscillation exhibits a significant dependence on the gate voltage which has been preliminary explained with the quantization of the surface conduction channel. The experimental demonstration can be very attractive for further exploration of quantum phase interference through electrical approaches, enabling applications in future information and electromagnetic sensing technology.Aharonov-Bohm (AB) oscillation is a quantum mechanical phenomenon which reveals the coupling of electromagnetic potentials with the electron wave function, affecting the phase of the wave function. Such a quantum interference effect can be demonstrated through the magnetotransport measurement focusing on low-dimensional electronic states. Here, we report the experimental observation of anomalous AB oscillation in an enhanced-mode topological insulator Bi2Se3 nanowire field-effect transistor (FET) under strong surface disorder, which is different from the reported AB oscillation in topological insulator nanostructures. The surrounding gate of the nanowire FET gives rise to tunability of the chemical potential and introduces strong disorder on the surface states, leading to primary oscillation with an anomalous h/e period. Furthermore, the oscillation exhibits a significant dependence on the gate voltage which has been preliminary explained with the quantization of the surface conduction channel. The experi...