Pulsed laser deposition of SBN:75 thin films with electro‐optic coefficient of 844 pm/V
Pulsed laser deposition of SBN:75 thin films with electro‐optic coefficient of 844 pm/V
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DOI：
10.1063/1.116919
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发表时间：
1996-08
影响因子：
4
通讯作者：
P. Tayebati;D. Trivedi;M. Tabat
中科院分区：
文献类型：
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作者：
P. Tayebati;D. Trivedi;M. Tabat
在这封信中，我们报告的脉冲激光外延沉积薄膜的Sr0.75Ba0.25Nb2O6 MgO衬底上测得的对角线Pockel系数r33=844 pm/V，在这些薄膜。这是迄今为止在薄膜材料中报道的最大线性电光系数。为了测量这个系数，我们开发了一种调制衍射技术。该方法广泛适用于基板绝缘且光轴垂直于基板的情况。
In this letter we report on the pulsed laser epitaxial deposition of thin films of Sr0.75Ba0.25Nb2O6 on MgO substrates with measured diagonal Pockel’s coefficient r33=844 pm/V in these films. This is the largest linear electro‐optic coefficient reported to date in a thin film material. In order to measure this coefficient, we developed a modulated diffraction technique. This method is widely applicable to cases where the substrate is insulating and the optical axis is normal to the substrate.