Temperature dependence of Rashba-Edelstein magnetoresistance in Bi/Ag/CoFeB trilayer structures
Temperature dependence of Rashba-Edelstein magnetoresistance in Bi/Ag/CoFeB trilayer structures
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DOI：
10.1063/1.4984281
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发表时间：
2017-05
影响因子：
4
通讯作者：
H. Nakayama;Hongyu An;A. Nomura;Yusuke Kanno;Satoshi Haku;Yusaku Kuwahara;Hiroto Sakimura;K. Ando-K.
中科院分区：
文献类型：
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作者：
H. Nakayama;Hongyu An;A. Nomura;Yusuke Kanno;Satoshi Haku;Yusaku Kuwahara;Hiroto Sakimura;K. Ando-K.
我们研究了最近发现的Rashba-Edelstein磁电阻（REMR）在Bi/Ag/CoFeB三层结构与不同的温度，Bi厚度，和磁场通过角相关的磁电阻（ADMR）测量。我们发现，REMR的大小显示出一个小的变化与温度的变化，这是与以前的工作的逆Rashba-Edelstein效应的温度演化。此外，不同厚度Bi膜和外磁场下的ADMR测量结果表明，在低温下，对于较厚的Bi膜（≥10 nm），场相关磁电阻的贡献不可忽略。
We have investigated the recently discovered Rashba-Edelstein magnetoresistance (REMR) in Bi/Ag/CoFeB trilayer structures with different temperatures, Bi thicknesses, and magnetic fields via the angular-dependent magnetoresistance (ADMR) measurements. We found that the magnitude of the REMR shows a small variation with changing temperature, which is consistent with the previous work on the temperature evolution of the inverse Rashba-Edelstein effect. Furthermore, the ADMR measurements with different thicknesses of Bi layers and external magnetic fields revealed that the contribution from the field-dependent magnetoresistance is not negligibly small for thicker Bi films ( ≥10 nm) at low temperature.