Cobalt silicide layers on Si. II. Schottky barrier height and contact resistivity
Cobalt silicide layers on Si. II. Schottky barrier height and contact resistivity
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Si 上的硅化钴层。
DOI：
10.1063/1.321452
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发表时间：
1975
影响因子：
3.2
通讯作者：
G. Gurp
中科院分区：
文献类型：
--
作者：
G. Gurp
硅化钴层已经通过电子束真空沉积Co到Si晶片上并随后进行热处理而生长。Co-Si接触的势垒高度φB和接触电阻率ρc由电流-电压特性确定。Co在P型Si上的势垒高度在退火时降低，并且在450 °C下退火后达到0.38 eV的值。N型Si上的势垒高度则为0.68 eV。据推测，这些是CoSi-Si接触的值。在较高温度下退火导致P型Si上的势垒较高（0.40 eV），而N型Si上的势垒较低，可能是由于CoSi 2的形成。P-型Si上的接触电阻率值是使用传输线模型确定的，并且发现与Al-Si接触的接触电阻率值相当。高于400 °C的退火导致接触电阻率的降低，主要是由于硼浓度的增加。通过在500 °C以上退火，接触电阻率再次增加，与增加的巴里一致。
Cobalt silicide layers have been grown by electron‐beam vacuum deposition of Co onto Si wafers and subsequent thermal treatment. The barrier height φB and contact resistivity ρc of the Co‐Si contacts were determined from current‐voltage characteristics. The barrier height for Co on P‐type Si decreases on annealing and reaches a value of 0.38 eV after annealing at 450 °C. The barrier height on N‐type Si is then 0.68 eV. Presumably these are the values for a CoSi‐Si contact. Annealing at higher temperatures results in a higher barrier (0.40 eV) on P‐type Si and a lower barrier on N‐type Si, probably by the formation of CoSi2. The values for the contact resistivity on P‐type Si were determined using a transmission‐line model and found to be comparable to those for Al‐Si contacts. Annealing above 400 °C results in a decrease of the contact resistivity, mainly due to an increase in the boron concentration. By annealing above 500 °C the contact resistivity increases again, in agreement with the increased barrie...